| PART |
Description |
Maker |
| AO3414 KO3414 |
VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| SI2304DS |
30 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
|
TY Semiconductor Co., Ltd
|
| FDJ129P FDJ129P07 |
P-Channel -2.5 Vgs Specified PowerTrench MOSFET
|
Fairchild Semiconductor
|
| SI8405DB |
12-V P-Channel 1.8-V (G-S) MOSFET 12 - V P -通道.8 VGS）的MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI3433 SI3433DV |
P-Channel 1.8-V (G-S) MOSFET P通道.8 VGS）的MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| KO3404 |
VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)
|
TY Semiconductor Co., Ltd
|
| LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled
Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc.
ICE COMPONENTS INC
|
| 2SK2111 |
N-Channel MOSFET
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| FDS3692 |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
N-Channel PowerTrench MOSFET 100V, 45A, 60mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
| NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package
N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m
N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
|
