| PART |
Description |
Maker |
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND16GW3C4A NAND08GW3C4AN1E NAND16GW3C4AN1E NAND0 |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND08GW3C4AZL1E NAND08GW3C2AZL1E |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| GM71C4263DLJ-80 GM71C4263DT-70 GM71C4263DLT-70 GM7 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG, Corp.
|
| V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| UPD424210G5-60-7JF UPD424210G5-60-7JF-G UPD424210L |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
FIBOX
|
| AT25F2048-14 |
Byte Mode and 256-byte Page Mode for Program Operations
|
ATMEL Corporation
|
