PART |
Description |
Maker |
SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg,快速开关WFET ® ,VDS=30V; VGS=±20V N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
SI7392ADP |
N-Channel Reduced Qg, Fast Switching WFET
|
Vishay Siliconix
|
SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI4888DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI7860DP |
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和,快速开关MOSFET
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
SI4394DY-T1-E3 SI4394DY SI4394DY-E3 |
N-Channel Reduced Qdg, Fast Switching WFET From old datasheet system
|
VISAY[Vishay Siliconix]
|
DTP4N60 DTU4N60 |
Reduced Gate Drive Requirement
|
DinTek Semiconductor Co,.Ltd
|
IPL65R210CFD |
Reduced board space consumption
|
Infineon Technologies A...
|