PART |
Description |
Maker |
FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
60CTTN015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package TRENCH SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
FF150R17KE4 |
62mm C-Series module with Trench/Feldstopp Trench/Feldstopp IGBT4 and Emitter Controlled Diode
|
Infineon Technologies AG
|
IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15 |
Trench Technology Trench Technology Ultra Low On-Resistance
|
International Rectifier
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
ISL9N308AP3 ISL9N308AS3ST |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mOhm N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m ? N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 8M з N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m з 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
FGD4536 FGD4536TM |
360V PDP Trench IGBT 360 V PDP Trench IGBT
|
Fairchild Semiconductor
|
CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
FDMC2674_07 FDMC2674 FDMC267407 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|