| PART |
Description |
Maker |
| M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|
| KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL- |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
|
Samsung Electronic
|
| M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| MB814405D-60L MB814405D-7OL |
1M ×4BIT
Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| KM44C4005C KM44C4105C KM44C4005CK-6 KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM44C1005D |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24 |
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行 互补型金属氧化物 电可擦可编程只读存储
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
|
Maxim Integrated Products
Atmel, Corp.
ON Semiconductor
TE Connectivity, Ltd.
|
| CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
|
ON Semiconductor
Emulation Technology, Inc.
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Xiamen Hongfa Electroacoustic Co., Ltd.
ITT, Corp.
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
