| PART |
Description |
Maker |
| IRFC450 |
HIGH VOLTAGE POWER MOSFET DIE
From old datasheet system
|
IXYS Corporation
|
| IRLC1304 2299 |
HEXFET Power MOSFET Die in Wafer Form(晶圆形式的HEXFET 功率MOS场效应管)
From old datasheet system
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IRFC460AB |
TRANSISTOR | MOSFET | N-CHANNEL | 515V V(BR)DSS | CHIP 晶体管| MOSFET的| N沟道| 515V五（巴西）决策支持系统|芯片
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier, Corp.
|
| IRFC240 |
HEXFET Power MOSFET Die
|
International Rectifier
|
| GP50PF-1A |
50 AMP PRESS FIT HIGH VOLTAGE DIODES (GPP DIE)
|
Diodes Incorporated
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| IXFL44N60 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFX62N25 IXFK62N25 |
HiPerFET Power MOSFETs Single MOSFET Die
|
http://
IXYS[IXYS Corporation]
|
| IXFN44N80 |
HiPerFETTM Power MOSFETs Single MOSFET Die
|
IXYS[IXYS Corporation]
|
| IRFC37N50A |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| IRFC43N50KB |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
