| PART |
Description |
Maker |
| K4S280432D-TC_L1L K4S280432D-TC_L1H K4S280432D-TC_ |
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
Samsung semiconductor
|
| K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4D263238G-GC |
128Mbit GDDR SDRAM
|
Samsung Electronic
|
| KM48S16030AT-G_F8 KM48S16030AT-G_FH KM48S16030AT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| V55C2128164VB V55C2128164VT V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG[Samsung semiconductor]
|
| K4R271669D-TCS8 K4R271669D K4R271669D-T |
128Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
