| PART |
Description |
Maker |
| M5M29GT320WG M5M29GB320WG |
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Renesas Electronics Corporation
|
| MR27V3202D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit One Time PROM
From old datasheet system
|
OKI
|
| MSM533222E |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit MASKROM
|
OKI[OKI electronic componets]
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HM5116400S-5 HM5116400S-7 HM5116400 HM5116400TS-5 |
4,194,304 - WORD X 4-BIT DYNAMIC RAM
|
HITACHI[Hitachi Semiconductor]
|
| TC5117400BST-70 TC5117400BST-60 |
4,194,304 WORD X 4 BIT DYNAMIC RAM
|
Toshiba Corporation
|
| TC55V4400FT-10 TC55V4400FT-12 TC55V4400FT-15 |
4,194,304-WORD BY 4-BIT CMOS STATIC RAM
4.194,304-WORD BY 4-BIT CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| THMY644071BEG |
4/194/304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
4,194,304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
|
| MSM6684B |
From old datasheet system
4,194,304-word x 1-bit Serial Register
|
OKI electronic componets
|
| MSM5117400D |
4,194,304-Word ??4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
4,194,304-Word 】 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
|
