| PART |
Description |
Maker |
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| BM29F400B BM29F400T 29F400T-12PC 29F400T-12PI 29F4 |
4 MEGABIT (512K x 8 ) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY(5V电源4M512K x 8 )扇区可擦除CMOS闪速存储器) 4兆位（为512k × 8伏扇区擦除的CMOS闪存V的电源的4分位（为512k × 8）扇区可擦除的CMOS闪速存储器
4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY
|
Winbond Electronics, Corp.
List of Unclassifed Manufacturers
|
| 29LV800BT-70 29LV800BB-70 29LV800BB-90 29LV800BT-9 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd.
|
| W39V040FAT W39V040FAQ W39V040FAP |
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE 512K X 8 FLASH 3.3V PROM, 11 ns, PQCC32
|
http://
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| LE25FU406B ENA1066A LE25FU406BFN |
CMOS IC 4M-bit (512K×8) Serial Flash Memory
512K X 8 FLASH 2.7V PROM, DSO8
|
Sanyo Semicon Device
|
| W39V040AP W39V040AQ |
512K 8 CMOS FLASH MEMORY WITH LPC INTERFACE 512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| MX26LV040PC-55 MX26LV040QC-55 MX26LV040TC-55G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
| AM29F040 AM29F040-120EI AM29F040-120FC AM29F040-12 |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F80 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位）.0伏的CMOS只，扇区擦除闪存
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| EN29F800T90TI EN29F800 EN29F800B45S EN29F800B45SI |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
|
ETC[ETC]
|
| EN29LV400A EN29LV400AB-70BIP EN29LV400AB-70TIP EN2 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
ETC
Eon Silicon Solution Inc.
|
|
