| PART |
Description |
Maker |
| MGF1402B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGF1303B |
Low Noise GaAs FET
|
Mitsubishi Electric Corporation
|
| SPF2086 |
Low Noise PHEMT GaAs FET
|
Sirenza Microdevices
|
| MGF1907A |
TAPE CARRIER LOW NOISE GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NE3519M04 NE3519M04-T2 NE3519M04-T2B |
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| MGF1403B 1403B |
LOW NOISE GaAs FET 低噪声砷化镓场效应管
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| MGF1908A |
TAPE CARRIER LOW NOISE GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PB-CFK0301-P1-000 PB-CFK0301-P3-000 |
High Dynamic Range Dual, Low Noise GaAs FET 双高动态范围，低噪声砷化镓场效应管
|
Mimix Broadband, Inc.
|
| Q62703-F108 Q62703-F106 CFY25 Q62703-F107 CFY25-17 |
From old datasheet system
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
SIEMENS[Siemens Semiconductor Group]
|
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
