PART |
Description |
Maker |
MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM From old datasheet system
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247 |
From old datasheet system SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS 10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
MOTOROLA[Motorola, Inc] Motorola Mobility Holdings, Inc.
|
MMSF3305 |
SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTSF3203_D ON2660 MTSF3203 |
SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTSF3N03HD ON2664 ON2663 |
SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP5PXX MTP7N06 |
(MTPxxxx) TMOS Power MOSFET
|
Motorola
|
MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
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