PART |
Description |
Maker |
MX29SL800CTXHC-90 MX29SL800CTXHC-90G MX29SL800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电压仅1.8V的闪
|
Macronix International Co., Ltd. PROM
|
MX29LV800CTXHC-90 MX29LV800CTXHC-90G MX29LV800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PBGA48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO44 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电V时仅闪存 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO44 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PBGA48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
MX27C4111PC-90 27C4111-10 27C4111-12 27C4111-15 27 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
MCNIX[Macronix International]
|
MX29LV800A |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MXIC
|
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
K6F8016R6D K6F8016R6D-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic Samsung semiconductor
|
K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K6F8016U6D-XF70 K6F8016U6D K6F8016U6D-FF55 K6F8016 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM 4194304-Bit (512K x 8) High Performance CMOS EPROM 4,194,304-Bit (512K x 8) High Performance CMOS EPROM 4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM IC-4MB CMOS OTP PROM
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
MX26LV040PC-55 MX26LV040QC-55 MX26LV040TC-55G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDIP32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|