| PART |
Description |
Maker |
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5R256HCXXX HY5R256HC745 |
RDRAM
|
Hynix Semiconductor
|
| SST36VF1602E-70-4C-B3KE SST36VF1601E-70-4C-B3KE SS |
16 Mbit (x8/x16) Concurrent SuperFlash 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
16 Mbit (x8/x16) Concurrent SuperFlash 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| IS42S32800-7BLI |
Concurrent auto precharge
|
Integrated Silicon Solu...
|
| SST36VF3204-70-4E-EKE SST36VF3204-70-4E-B3KE |
32 Mbit (x8/x16) Concurrent SuperFlash
|
Silicon Storage Technology, Inc.
|
| SST36VF3204 SST36VF3204-70-4I-EKE SST36VF3203 SST3 |
32 Mbit (x8/x16) Concurrent SuperFlash
|
SST[Silicon Storage Technology, Inc]
|
| SST34HF1601-70-4C-L1P SST34HF1601-70-4E-L1P SST34H |
16 Mbit concurrent superflash SRAM combo-memory
|
Silicon Storage Technology
|
| KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SST34HF1601C |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash SRAM Combo Memory
|
Silicon Storage Technology
|
| SST34HF3282C SST34HF3282 SST34HF3284 SST34HF3284C |
(SST34HF3282x / SST34HF3284x) 32M-bit Concurrent SuperFlash + SRAM Combo Memory
|
Silicon Storage Technology
|
