| PART |
Description |
Maker |
| STB30NS15 |
N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STS5NS150 |
N-CHANNEL 150V - 0.075 ohm - 5A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET
|
STMicroelectronics
|
| STL45N65M5 |
N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV package
|
ST Microelectronics
|
| SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
http://
|
| BUK7575-55 BUK7575-55_2 BUK7575-55127 |
19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
TrenchMOS TM transistor Standard level FET
|
NXP SEMICONDUCTORS
Philips
|
| D2TO020CR0750JRE3 |
RESISTOR, METAL GLAZE/THICK FILM, 20 W, 5 %, 150 ppm, 0.075 ohm, SURFACE MOUNT TO-263, ROHS COMPLIANT
|
Vishay Intertechnology, Inc.
|
| SI9933ADYD84Z SI9933ADYL86Z SI9933ADYF011 |
3.4 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET SO-8
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IXTH36P10 |
Standard Power MOSFET 36 A, 100 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| APT50M75JLL |
POWER MOS 7 500V 52A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
|
