| PART |
Description |
Maker |
| MCM6323AYJ10 MCM6323AYJ10R SCM6323AYJ10A SCM6323AY |
64K X 16 bit 3,3V asynchronous fast static RAM
ER 3C 3#12 PIN PLUG RoHS Compliant: No
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| HM62W8511HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| HM621400HCJP-12 HM621400HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| R1RP0416DGE-2PI R1RP0416DSB-2PI |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| GS71024T-8T GS71024T-10T GS71024T-10IT GS71024U-10 |
8ns 64K x 24 1.5Mb asynchronous SRAM
1.5Mb4K x 24Bit）Asynchronous SRAM(1.5M位（64K x 24位）异步静态RAM) 即：1.5MB4K的x 24位）异步SRAM50万位4K的24位）异步静态RAM）的
x24 SRAM x24的SRAM
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM
10ns 256K x 16 4Mb asynchronous SRAM
12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
| AS7C3256AA AS7C3256A AS7C3256A-20TIN AS7C3256A-10J |
Quadruple D-Type Flip-Flops With Clear 16-TSSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-TSSOP -40 to 85 32K X 8 STANDARD SRAM, 20 ns, PDSO28
IC,AS7C3256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,3.3V 32K X 8 STANDARD SRAM, 10 ns, PDSO28
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 10 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-SOIC -40 to 85 32K X 8 STANDARD SRAM, 12 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-TVSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-SSOP -40 to 85
SRAM - 3.3V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Memory, Inc.
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS78108AB-10I GS78108AGB-10IT |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
| HM628511CJPI12 HM628511HCJPI-12 HM628511HCI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| UPD4382361GF-A85 UPD4382321GF-A85 UPD4382361GF-A90 |
x32 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Samsung Semiconductor Co., Ltd.
|
| M68AR128M 7993 M68AR128ML55ZB1T M68AR128ML55ZB6T M |
2 MBIT (128K X16) 1.8V ASYNCHRONOUS SRAM
2 MBIT (128K X16) 1.8V ASYNCHRONOUS SRAM
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
