| PART |
Description |
Maker |
| HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered
1M x 64 Bit DRAM Module unbuffered
From old datasheet system
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 |
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72
4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72
4M x 32 Bit EDO DRAM Module
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| HYM368035GS-60 HYM368035S-60 Q67100-Q3018 HM368035 |
8M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
8M x 36-Bit EDO-DRAM Module
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J |
1M X 16 EDO DRAM, 60 ns, PDSO44
16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
|
ELPIDA MEMORY INC
|
| HYM72V8005GU-60 HYM72V8005GU-50 HYM64V8005GU-60 HY |
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module 8M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc.
Alliance Semiconductor
|
| HYM368025GS-60 HYM368025GS-50 HYM368025S-60 HYM368 |
8M x 36-Bit EDO - DRAM Module
8M x 36 Bit EDO DRAM Module with Parity
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
