| PART |
Description |
Maker |
| MRF158 |
The Broadband RF TMOS? 2W, 500MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| PHI214-25S |
Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管，25瓦中，LMS脉冲0％的责任12日至1月四号吉
|
Tyco Electronics
|
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| PH1214-25S |
Radar Pulsed Power Transistor, 25W, 1us Pulse, 10% Duty 1.2 - 1.4 GHz
|
Tyco Electronics
|
| NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| ABA-31563-TR2G ABA-31563 ABA-31563-BLKG ABA-31563- |
ABA-31563 · Low Cost Broadband Silicon RFIC Amplifier
3.5 GHz Broadband Silicon RFIC Amplifier
GT 3C 3#16S SKT PLUG
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G6003028-FL-15 T1G6003028-FS-EVB1 |
30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1L2003028-SP |
30 W, 28V, 500 MHz-2 GHz, PowerbandTM LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MRF184S MRF184 MRF184D |
MRF184R1, MRF184SR1 1 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
