PART |
Description |
Maker |
1SS348 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
1SS391 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
1SS319 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
KDR728 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC Holdings KEC[KEC(Korea Electronics)]
|
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
HRB0103A |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
|
HITACHI[Hitachi Semiconductor]
|
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
1SS370 E000291 |
From old datasheet system DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
BAP63-02 |
High speed switching for RF signals Low diode capacitance Low diode forward resistance
|
TY Semiconductor Co., Ltd
|