| PART |
Description |
Maker |
| 2SC1967 SC1967 |
RF POWER TRANSISTOR(NPN EPITAXAIL PLANAR TYPE)
From old datasheet system
NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| NP043A2 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| UP04314 |
Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
| XP4654 XP04654 |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1226 2SC1226A |
Silicon NPN Epitaxial Planar Type
From old datasheet system
Silicon NPN epitaxial planer type
|
PANASONIC[Panasonic Semiconductor]
|
| PU4120 PU4120P PU4120Q |
V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array
(PU4120 / PU4420) SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE
|
Panasonic Semiconductor
|
| 2SC2800 |
NPN Epitaxial Planar Type
|
Mitsubishi Electric
|
| 2SC2098 |
NPN EPITAXIAL PLANAR TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| ULB122 ULB122G-XX-TM3-T ULB122G-B6-TM3-T |
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
0.8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
