| PART |
Description |
Maker |
| GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
http://
|
| GS88132BGD-150IV GS88118BD-200IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS880F36T-11I GS880F36T-14I GS880F32T-12 GS880F36T |
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
http://
|
| GS880F18BT-5.5IV GS880F18BT-5.5V GS880F18BT-6.5IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS88136BD-300I GS88118BD-300 GS88132BD-300 GS88132 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
http://
|
| GS88032CT-250 GS88036CT-250 GS88018CT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI Technology
|
| GS88218BB-333 GS88218BB-3005I GS88218BB-200 GS8823 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 5 ns, PBGA119
|
http://
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| GS88218BGB-200V GS88236BB-250IV |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PBGA119
|
GSI Technology, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| GS882V18BB-3005I GS882V18BD-200I GS882V18BD-250 GS |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
