| PART |
Description |
Maker |
| MR27V6452D |
64Mbit Electrically Programmable Read-Only Memory With Page Mode.(4M字6位或8位M字位一次性可编程ROM 64兆比特电可编程只读页面模式。（4分字× 16位或8位M字8位一次性可编程ROM的字记忆体）
|
OKI SEMICONDUCTOR CO., LTD.
|
| HYB39S64800BT HYB39S64400BT HYB39S64XXX0BTL |
64MBit Synchronous DRAM(64M4× 2M× 8)同步动态RAM)
64MBit Synchronous DRAM(64M4× 4M× 4)同步动态RAM)
64MBitSynchronous DRAM(64M位同步动态RAM(低功耗版))
|
SIEMENS AG
|
| K4S641632E-TC75 K4S641632E K4S641632E-TC60 |
64Mbit SDRAM
|
Samsung semiconductor
|
| K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Circuit Solution Inc
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| IS41LV16257B-35K IS41LV16257B-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| MSM5116160F MSM5116160F-50JS MSM5116160F-60JS MSM5 |
1M X 16 FAST PAGE DRAM, 60 ns, PDSO44
1M X 16 FAST PAGE DRAM, 70 ns, PDSO42
1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
OKI electronic componets
|
