| PART |
Description |
Maker |
| SST29EE512 29EE512B |
5.0V-only 512 Kilobit Page Mode EEPROM
From old datasheet system
|
SST
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| AM27C512 AM27C4096-55DC AM27C4096-55DCB AM27C4096- |
512 Kilobit (64 K x 8-Bit) CMOS EPROM 512千比特（64亩8位）的CMOS存储
512 Kilobit (64 K x 8-Bit) CMOS EPROM 64K X 8 UVPROM, 90 ns, CDIP28
Quad bistable latches 16-SOIC 0 to 70 512千比特（64亩8位）的CMOS存储
512 Kilobit (64 K x 8-Bit) CMOS EPROM 64K X 8 UVPROM, 120 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SOIC 0 to 70 64K X 8 UVPROM, 55 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SOIC 0 to 70 64K X 8 UVPROM, 250 ns, CDIP28
Octal D-type Transparent Latches with 3-state Outputs 20-SO 0 to 70 64K X 8 UVPROM, 200 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-PDIP 0 to 70 512千比特（64亩8位）的CMOS存储
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SSOP 0 to 70 64K X 8 UVPROM, 250 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SO 0 to 70 64K X 8 UVPROM, 70 ns, CDIP28
Octal D-type Transparent Latches with 3-state Outputs 20-PDIP 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Octal D-type Transparent Latches with 3-state Outputs 20-SOIC 0 to 70
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| SST29EE512704IPHE SST29EE512 SST29EE512-70-4C-EH S |
512 Kbit (64K x8) Page-Write EEPROM
|
SST[Silicon Storage Technology, Inc]
|
| NAND512W3A2CN6F NAND512W3A2CN6E |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
Numonyx B.V
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| AMD27C64 |
64 Kilobit (8192 x 8-Bit) CMOS EPROM
|
Advanced Micro Devices
|
| AM41PDS3228DB11IS AM41PDS3228DB10IS AM41PDS3228DB1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
