| PART |
Description |
Maker |
| D2014UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 500MHz SINGLE ENDED
|
SEME-LAB[Seme LAB]
|
| D1025UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2205UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED
From old datasheet system
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D2293UK D2293 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Seme LAB
|
| D2294UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(15W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应15W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1007UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D1028UK D1028 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D1006UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应120W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
