| PART |
Description |
Maker |
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EBR51EC8ABFD-8C EBR51EC8ABFD-AEP EBR51EC8ABFD-AD |
512MB Direct Rambus DRAM RIMM Module
|
Elpida Memory
|
| MC-4R64FKE8D-840 |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 18-BIT)
|
Elpida Memory, Inc.
|
| MC-4R192CPE6C MC-4R192CPE6C-653 MC-4R192CPE6C-745 |
Direct Rambus DRAM RIMM Module 192M-BYTE 96M-WORD x 16-BIT
|
http://
NEC[NEC]
NEC Corp.
|
| MC-4R256FKE8D-840 |
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R256FKE6D-840 |
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128FKE8S-845 MC-4R128FKE8S |
Direct Rambus DRAM SO-RIMM Module 128M-BYTE (64M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R512FKE8D-840 |
Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128FKE6D-840 |
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128FKE6D-845 MC-4R128FKE6D MC-4R128FKE6D-653 |
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA[Elpida Memory]
|
| EBR12EC8ABKD-8C EBR12EC8ABKD-AD EBR12EC8ABKD-AE EB |
128MB 32-bit Direct Rambus DRAM RIMM?/a> Module
128MB 32-bit Direct Rambus DRAM RIMM Module
128MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
|
Elpida Memory
|
