| PART |
Description |
Maker |
| DO-213AA |
Surface Mount Recti
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| MBRF2060CT_D ON0451 MBRF2060CT MBRF2060 |
SWITCHMODE?/a> Schottky Power Rectifirer
SWITCHMODE Schottky Power Rectifirer
20 AMPERES 60 VOLTS
From old datasheet system
SWITCHMODE⑩ Schottky Power Rectifirer
SWITCHMODESchottky Power Rectifirer ⑩肖特基开关模式电Rectifirer
|
ON Semi
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MBRP20035L |
SWITCHMODE??Schottky Power Rectifirer
SWITCHMODE Schottky Power Rectifirer
SWITCHMODESchottky Power Rectifirer
|
MOTOROLA INC
Motorola, Inc.
|
| MBRB20100CT1_D ON0432 MBRB20100CT1 MBRB20100CT1-D |
SWITCHMODE Schottky Power Rectifier D2PAK-SL Straight-Leaded Through Hole Mount Package
20 AMPERES 100 VOLTS
From old datasheet system
SWITCHMODE⑩ Schottky Power Rectifier D2PAK-SL Straight-Leaded Through Hole Mount Package
SWITCHMODESchottky Power Rectifier D2PAK-SL Straight-Leaded Through Hole Mount Package
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC
Max Power 43 W BTL ??4 ch Audio Power IC
Max Power 43 W BTL 】 4 ch Audio Power IC
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
Max Power 43 W BTL × 4 ch Audio Power IC
Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
| 2SC5935P 2SC5935 2SC5935Q |
Power Device - Power Transistors - General-Purpose power amplification
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE
|
Panasonic Semiconductor
|
| 2SD1775A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
