| PART |
Description |
Maker |
| SC070S150S5B SC070R100A5P SC070H015A5P SC070H015S5 |
SCHOTTKY DIE 70 X 92 MILS 肖特基模70 × 92 MILS
|
BI Technologies, Corp.
International Rectifier, Corp.
|
| SC070 |
Schottky Die 70 x 92 Mils
|
International Rectifier
|
| SB040P105-W-AG SB040P105-W-AG_AL SB040P105-W-AG/AL |
Schottky Barrier Diode Wafer 40 Mils, 105 Volt, 1 Amp
|
TRANSYS Electronics Limited
|
| SB090P125-W-AG |
Schottky Barrier Diode Wafer 90 Mils, 125 Volt, 8 Amp
|
TRANSYS Electronics Limited
|
| SC0365.SERIES 2598 |
SCHOTTKY DIE 036 x 036 mils
From old datasheet system
|
International Rectifier
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| SB065C040-3-W-AG SB035C015 |
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF.
|
TRANSYS Electronics Limited
|
| 138P150-W-AG SB106_138P150-W-AG_AL SB106/138P150-W |
Schottky Barrier Diode Wafer 106x138 Mils, 150 Volt, 15 Amp
|
TRANSYS Electronics Limited
|
| SB106P200-W-AG SB106P200-W-AG_AL SB106P200-W-AG/AL |
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
|
TRANSYS Electronics Limited
|
| PUMA2US2500I-2512 PUMA2US2500I-2510 PUMA2US2500I-2 |
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7(SERIAL EE)
10MS, 8 TSSOP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
10MS, 8 MINI-MAP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 LAP, IND TEMP, GREEN, 2.7V(SERIAL EE)
SRAM/EPROM 静态存储器/存储
10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE) 静态存储器/存储
|
TDK, Corp.
TE Connectivity, Ltd.
|
| SB157_106C015-30-W-AG_AL SB157/106C015-30-W-AG/AL |
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF.
|
TRANSYS Electronics Limited
|
|
