| PART |
Description |
Maker |
| 2SC6120 2SC612010 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC6046 |
GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC537607 2SC5376 |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC6026 |
Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4738 E000984 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SB850 |
EPITAXIAL PLANER TYPE GENERAL PURPOSE POWER AMPLIFIER
EPITAXIAL PLNNER TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC4944 2SC494407 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
Toshiba Semiconductor
|
| 2SC473807 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC4738 2SC4738-GR 2SC4738-L 2SC4738FT-GR |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
