| PART |
Description |
Maker |
| IXTA05N100 IXTP05N100 |
Discrete MOSFETs: Standard N-channel Types
High Voltage MOSFET
|
IXYS[IXYS Corporation]
|
| 98822 IXTA1N80 IXTY1N80 IXTP1N80 |
High Voltage MOSFET
Discrete MOSFETs: Standard N-channel Types
|
IXYS[IXYS Corporation]
|
| IXTH6N120 IXTT6N120 |
Discrete MOSFETs: Standard N-channel Types
High Voltage Power MOSFET
|
IXYS[IXYS Corporation]
|
| ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender
HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| FDD6N50 FDU6N50 |
N-Channel UniFETTM MOSFET 500V, 6A, 900m
Discrete MOSFET
|
Fairchild Semiconductor
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IXTA05N100 |
N-Channel Enhancement Mode High Voltage MOSFET(??ぇ婕???荤┛?靛?000V,瀵奸??甸?5惟??娌??澧?己????靛?MOSFET)
|
IXYS CORP
|
| FZT1053ATA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
75V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT-223
|
Diodes Incorporated
|
| PFS7324L PFS7327H PFS7328H |
High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed Diode
|
Power Integrations, Inc.
|
| IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
