Part Number Hot Search : 
GPJ8G SD141 32620 DTA123YE 6E0412PS AS2001 GP1U267X AD9220AR
Product Description
Full Text Search

BSM50GD120DN2E3226 - IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) 50 A, 1200 V, N-CHANNEL IGBT Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-41 From old datasheet system

BSM50GD120DN2E3226_307077.PDF Datasheet

 
Part No. BSM50GD120DN2E3226 050D12E2 C67070-A2514-A67
Description IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) 50 A, 1200 V, N-CHANNEL IGBT
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-41
From old datasheet system

File Size 132.74K  /  9 Page  

Maker


SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: BSM50GD120DN2E3226
Maker: EUPEC
Pack: 模块
Stock: Reserved
Unit price for :
    50: $100.62
  100: $95.58
1000: $90.55

Email: oulindz@gmail.com

Contact us

Homepage http://www.automation.siemens.com/semiconductor/in
Download [ ]
[ BSM50GD120DN2E3226 050D12E2 C67070-A2514-A67 Datasheet PDF Downlaod from Datasheet.HK ]
[BSM50GD120DN2E3226 050D12E2 C67070-A2514-A67 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for BSM50GD120DN2E3226 ]

[ Price & Availability of BSM50GD120DN2E3226 by FindChips.com ]

 Full text search : IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) 50 A, 1200 V, N-CHANNEL IGBT Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-41 From old datasheet system
 Product Description search : IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) 50 A, 1200 V, N-CHANNEL IGBT Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-41 From old datasheet system


 Related Part Number
PART Description Maker
MIG100J7CSB1W MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
BSM10GD60DN2 C67076-A2508-A67 IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
BSM50GD120DN2 C67076-A2514-A67 IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块(功率模相全桥包括快速滑行二极管
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
MIG400J101H Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
MIG150Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
BSM150GAL100D BSM150GB100D TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五(巴西)国际消费电子展| 150A一(c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
Infineon Technologies AG
APTGF90A60T3AG Phase leg NPT IGBT Power Module Power Module
Microsemi Corporation
MG100Q2YS65H IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba Semiconductor
C67076-A2504-A17 BSM15GD120D2 IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 25 A, 1200 V, N-CHANNEL IGBT
Circular Connector; No. of Contacts:19; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Right Angle Plug; Insert Arrangement:14-19 IGBT功率模块(功率模相全桥包括快速滑行二极管
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
APTGT225A170 340 A, 1700 V, N-CHANNEL IGBT
Phase leg Trench Field Stop IGBT Power Module
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
APTGT450DA60G Boost chopper Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
 
 Related keyword From Full Text Search System
BSM50GD120DN2E3226 size BSM50GD120DN2E3226 Technique BSM50GD120DN2E3226 Semiconductor BSM50GD120DN2E3226 oscillator BSM50GD120DN2E3226 maxim
BSM50GD120DN2E3226 mode BSM50GD120DN2E3226 mosfet BSM50GD120DN2E3226 datasheet | даташит BSM50GD120DN2E3226 max BSM50GD120DN2E3226 Electronic
 

 

Price & Availability of BSM50GD120DN2E3226

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.30383920669556