| PART |
Description |
Maker |
| HY62V8100B HY62V8100BLLT1 HY62V8100BLLG-E HY62V810 |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.3V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
| HY62U8200B HY62U8200B-E HY62U8200B-I A0A17 |
Low Power Slow SRAM - 2Mb
256Kx8bit CMOS SRAM
256K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| HY62LF16404C HY62LF16404C-I |
x16|2.5V|70/85|Super Low Power Slow SRAM - 4M x16 | 2.5V的| 70/85 |超级低功耗SRAM的速度 4
256Kx16bit full CMOS SRAM
|
Alpha Industries, Inc.
Hynix Semiconductor
|
| GM76U256CLLT |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| GM76U256CLLFW |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| M68Z128W M68Z128W-70N1T M68Z128WN |
3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable 3V的，1兆位的输128KB的x8低功耗SRAM启用
128K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
3V / 1 Mbit 128Kb x8 Low Power SRAM with Output Enable
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| AS6VA5128-BI AS6VA5128 AS6VA5128-BC |
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 3.3V 512K × 8 Intelliwatt 低功CMOS 静态RAM)
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM 2.7V.3V12k × 8 Intelliwatt低功耗CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Alliance Semiconductor Corporation
|
