| PART |
Description |
Maker |
| K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632 |
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect
|
IDT[Integrated Device Technology]
|
| UT6164C64AQ-6 |
64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM 64K的64 SYNCHRONOU拧流水线突发的CMOS的SRAM
|
Electronic Theatre Controls, Inc.
|
| PDM34088SA12QATR PDM34088SA12QATY PDM34088SA8TQTY |
3.3V 64K x 32 fast CMOS synchronous static RAM with burst counter and output register
|
PARADIGM
|
| IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
From old datasheet system
200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| CY7C1332 CY7C1331 7C1331 |
64K x 18 Synchronous Cache 3.3V RAM(3.3V 64K x 18 同步高速缓冲存储器 RAM) 64K的18同步高速缓.3V的内存电压（3.3V 64K的18同步高速缓冲存储器的RAM
From old datasheet system
64K x 18 SynchronousCache 3.3V RAM
|
Cypress Semiconductor Corp.
|
| WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
|
Vicor, Corp.
|
| K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
| AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PF |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz
|
Alliance Semiconductor, Corp.
|
| 19074-0004 19080-0003 19075-0014 19079-0011 19075- |
STAR RING KRIMPTITE (SRA-129-08) 1 mm2, BRASS, RING TERMINAL
MULTI-STUD RING INSULKRIMP (B-2006-MSX) 2 mm2, COPPER ALLOY, RING TERMINAL
STAR RING INSUL ON TAPE (SRB-229-06XT) 2 mm2, BRASS, RING TERMINAL
MULTI-STUD RING (C-1006-MS) 6 mm2, COPPER ALLOY, RING TERMINAL
STAR RING INSUL ON TAPE (SRA-229-06XT) 1 mm2, BRASS, RING TERMINAL
STAR RING KRIMPTITE (SRA-129-06) 1 mm2, BRASS, RING TERMINAL
190770005 1 mm2, BRASS, RING TERMINAL
STAR RING (STEEL) INSUL TAPED (SRA-S-229 1 mm2, STEEL, RING TERMINAL
MULTI-STUD KRIMPTITE TAPED (C-1006-MST)
STAR RING (STEEL) ON TAPE (SRB-S-129-10T
190740025
|
Molex, Inc.
Littelfuse, Inc.
MOLEX INC
|
