PART |
Description |
Maker |
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http:// SIEMENS A G SIEMENS AG
|
Q67100-Q973 HYB514400BJ HYB514400BJ-50 HYB514400BJ |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
|
SIEMENS[Siemens Semiconductor Group]
|
HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM) 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No 4,194,304 WORD x BIT DYNAMIC RAM 4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HYB5118160BSJ-50- HYB3118160BSJ-50 HYB3118160BSJ-6 |
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
|
Siemens Semiconductor Group SIEMENS AG
|
HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G SIEMENS AG http:// Siemens Semiconductor G...
|
MSM5116405C MSM5116405C-50TS-L |
4M X 4 EDO DRAM, 50 ns, PDSO24 4M×4 Dynamic RAM(4M×4动态RAM) 4米4动态RAM米4动态内存) From old datasheet system 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI ELECTRIC INDUSTRY CO LTD OKI SEMICONDUCTOR CO., LTD.
|
MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块) From old datasheet system 16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
IC41C8512 IC41LV8512 IC41LV8512-60TI IC41C8512-35K |
DYNAMIC RAM, EDO DRAM 512K x 8 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
|