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MX23L25611 - 256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)

MX23L25611_310550.PDF Datasheet


 Full text search : 256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)


 Related Part Number
PART Description Maker
MX23L25611 MX23L25611MC-12 23L25611-10 23L25611-12 256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)
MXIC
MCNIX[Macronix International]
SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 (SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
Silicon Storage Technology
W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
Winbond
http://
MC-242443F9-B10-BT3 MC-242443F9-B90-BT3 MCP(32M-bit flash memory 16M-bit mobile specified RAM)
NEC
MC-242452F9-B10-BT3 MC-242452F9-B90-BT3 MCP(32M-bit flash memory 16M-bit mobile specified RAM)
NEC
K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
SAMSUNG[Samsung semiconductor]
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
SAMSUNG[Samsung semiconductor]
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
V54C3128404VT 128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
Mosel Vitelic Corp
EDD2508AKTA-5-E 256M bits DDR SDRAM (32M words x 8 bits DDR400)
Elpida Memory
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
256M; 133MHz LVTTL interface SDRAM
256M; 100MHz LVTTL interface SDRAM
Elpida Memory
 
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MX23L25611 power suppiy MX23L25611 Data MX23L25611 Amplifiers MX23L25611 Controller MX23L25611 amp
 

 

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