| PART |
Description |
Maker |
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| 74VHC74MTC 74VHC74N 74VHC74SJ 74VHC74 74VHC74MTCX |
Dual D-Type Flip-Flop 双D型触发器
Supervisor Push-Pull Active High, -40C to 85C, 3-SOT-23, T/R
Dual D-Type Flip-Flop with Preset and Clear
|
Fairchild Semiconductor, Corp.
|
| MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| ADM8320 ADM8316 ADM8318 ADM8319 ADM8322 |
Supervisory Circuit with Watchdog, Manual Reset, and Active-Low Open-Drain Reset Output
Supervisory Circuit with Watchdog, Manual Reset, and Active-Low Push-Pull Reset Output
Supervisory Circuit with Watchdog, Active-Low and Active-High Push-Pull Reset Outputs
Supervisory Circuit with Manual Reset, Active-Low and Active-High Push-Pull Reset Outputs
Supervisory Circuit with Manual Reset, Active-Low Open-Drain and Active-High Push-Pull Reset Outputs
|
Analog Devices
|
| CAT803ZTBI-GT3 CAT809ZSDI-GT3 CAT809RSDI-GT3 CAT81 |
Supervisor, Open drain, Act low 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
Supervisor, Push-pull, Act low 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
Supervisor, Push-pull, Act high 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
|
ON Semiconductor
|
| TS836_03 TS836 TS836-4I |
MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH
|
STMICROELECTRONICS[STMicroelectronics]
|
| TS836-4IZ-AP TS836-4ID TS836-4IDT TS836-4IPT TS836 |
MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH
|
ST Microelectronics
|
| P4C1258-25CMB P4C1258L-25CMB P4C1258-45LMB P4C1258 |
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
Micro Power Voltage detector, w/push pull active low, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE LOW OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
MICRO POWER VOLTAGE DETECTOR, W/OPEN DRAIN, ACTIVE LOW, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
MICTO POWER VOLTAGE DETECTOR, W/ACTIVE DRAIN, ACTIVE LOW, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE HIGH OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R x4的SRAM
MICRO POWER VOLTAGE DETECTOR, W/OPEN DRAIN ACTIVE LOW, -40C to 125C, 4-SOT-143, T/R x4的SRAM
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R x4的SRAM
x4 SRAM x4的SRAM
|
Unisonic Technologies Co., Ltd.
Pyramid Semiconductor, Corp.
|
| ASM1817R-10 ASM1817R-20 |
150 ms, Low power, 3.3V/3.0 V mP reset, active high, push-pull output
|
Alliance Semiconductor
|
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