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LZ1132BD - 32-UNIT HIGH VOLTAGE MOS IC

LZ1132BD_313821.PDF Datasheet


 Full text search : 32-UNIT HIGH VOLTAGE MOS IC


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APT5014BLL APT5014SLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT6017B2FLL APT6017LFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
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APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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ADPOW[Advanced Power Technology]
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High-Voltage High-Speed Switching Applications
High-Voltage, High-Speed Switching Applications
From old datasheet system
SANYO[Sanyo Semicon Device]
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APT6045CVR APT5024BVFR POWER MOS V 600V 11.8A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW[Advanced Power Technology]
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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