| PART |
Description |
Maker |
| HS9-4424BRH-8 HS9-4424BRH-Q HS9-4424RH HS9-4424RH- |
SWITCH SLIDE DPDT RT ANG L=9MM 辐射加固双，非逆变电源的MOSFET驱动
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers(抗辐射双路同相功率MOSFET驱动
Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
Radiation Hardened Dual/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| HCTS390MS HCTS390D HCTS390DMSR HCTS390HMSR HCTS390 |
Radiation Hardened Octal Transparent Latch/ Three-State
Radiation Hardened Dual Decade Ripple Counter
|
INTERSIL[Intersil Corporation]
|
| JANSR2N7281 FN4294 |
Radiation Hardened/ N-Channel Power MOSFET
Radiation Hardened, N-Channel Power MOSFET
Radiation Hardened N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier
Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大
CONNECTOR ACCESSORY
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation
Intersil, Corp.
http://
|
| FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| IRHY57230CMSE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| 5962-05238 5962-05240 5962-05241 5962-05242 5962-0 |
30W Total Output Power 28 Vin 1.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05238
30W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05240
30W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05241
30W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05242
30W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-06241
30W Total Output Power 28 Vin 2.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package.
|
International Rectifier
|
| XQVR1000-4CG560M XQVR1000-4CG560V XQVR600-4CB228M |
2.5V Radiation Hardened FPGAs 2.5V的抗辐射FPGA
QPro Virtex 2.5V Radiation Hardened FPGAs
|
Panduit, Corp.
Xilinx, Inc.
|
| IRH7450SE 2036 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET
From old datasheet system
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AA package
|
International Rectifier
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
