PART |
Description |
Maker |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SJ483 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
HAT2202C HAT2202C-15 |
Silicon N Channel MOS FET powerswitching Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
FW306 |
N- Channel Silicon MOS FET High Speed Switching
|
Sanyo Semicon Device
|
2SJ576 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
2SJ587 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ576 |
Silicon P Channel MOS FET High Speed Switching
|
http:// HITACHI[Hitachi Semiconductor]
|