| PART |
Description |
Maker |
| STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH??IGBT
(STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESHIGBT N沟道3A 600V IGBT的TO-220/DPAK/D2PAK PowerMESH
(STGD3NB60K / STGP3NB60K / STGP3NB60KD / STGB3NB60KD) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
|
STMicroelectronics N.V.
ST Microelectronics
|
| STGD7NB60S STGD7NB60ST4 |
N-CHANNEL 7A - 600V DPAK POWERMESH IGBT
N-CHANNEL 7A - 600V DPAK Power MESH IGBT
N-CHANNEL 7A - 600V DPAK Power MESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STD3NM60 STP4NM60 STD3NM60-1 8370 |
N-CHANNEL 600V - 1.3 OHM - 3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET
N-CHANNEL 600V - 1.3 OHM - 3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
From old datasheet system
N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STGP3NB60S STGD3NB60S |
(STGP3NB60S / STGD3NB60S) N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH?/a> IGBT
N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT
N-CHANNEL 3A - 600V TO-220/DPAK POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STD11NM60N STF11NM60N STB11NM60N-1 STP11NM60N STD1 |
N-channel 600V - 0.37楼? - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| STGP7NB60F STGD7NB60FT4 STGD7NB60F |
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:MS-013; Reel Quantity:1500; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
N-CHANNEL 7A 600V TO-220/DPAK POWERMESH IGBT
N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STD5NK60ZT4 |
N-CHANNEL 600V - 1.2 OHM - 5A TO-220/TO-220FP/DPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
|
ST Microelectronics
|
| FQD5N60CTM |
600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2.8 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTD78N03R-1G NTD78N03R |
Power MOSFET 25 V, 85 A,Single N-Channel, DPAK
11.3 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, CASE 369D-01, DPAK-3
|
ON Semiconductor
|
