| PART |
Description |
Maker |
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http://
SIEMENS A G
SIEMENS AG
|
| HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116 |
4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
4M x 4-Bit Dynamic RAM 4米4位动态随机存储器
|
http://
SIEMENS AG
|
| HYB314405BJL-60 HYB314405BJL-70 Q67100-Q2124 |
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
1M x 4-Bit Dynamic RAM
|
SIEMENS AG
|
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| MSM5117400B |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
4194304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM5117400C |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
4194304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| IC41C82052S IC41LV82052S IC41C82052S-50J IC41C8205 |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| HYM72V1620GS-50 HYM72V1620GS-50- HYM72V1620GS-60 H |
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
16M x 72-Bit Dynamic RAM Module (ECC - Module )
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
|
