| PART |
Description |
Maker |
| KM62U256CLG-8L KM62U256CLG-10L |
32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
|
MAXIM - Dallas Semiconductor
|
| KM62U256CLTG-10L KM62U256CLTG-8L KM62U256CLG-10L K |
32Kx8 bit Low Power & Low Vcc CMOS Static RAM
32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
|
ETC
SAMSUNG[Samsung semiconductor]
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| IS62WV25616ALL-70BI IS62WV25616ALL-70T IS62WV25616 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| EM620FV8BT |
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| CMP0417AA0-F70I CMP0417AA0-I |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| EM644FU8ET-12LF EM684FU8ET-12LF EM644FR16FU-10S EM |
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM6160FR8DS-85LF EM6160FS32DS-85LF EM6160FU16DS-85 |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM640FV16FW |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
