| PART |
Description |
Maker |
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| MW6S010GMR1 MW6S010GNR1 MW6S010MR1 MW6S010 MW6S010 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司
FREESCALE[Freescale Semiconductor, Inc]
Freescale (Motorola)
|
| MRF6P24190HR6 MRF6P24190HR608 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF1518T1 MRF1518NT1 |
RF Power Field Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
| MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF7S35120HSR3 |
RF Power Field Effect Transistor
|
Motorola
|
