| PART |
Description |
Maker |
| IRF5850 IRF5850TR |
2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
Ultra Low On-Resistance
|
International Rectifier
|
| TPCA8004-H |
MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
| IRF7750GPBF |
HEXFET庐 Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET
|
International Rectifier
|
| IRF7380QPBF IRF7380QPBF10 |
3.6 A, 80 V, 0.073 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Advanced Process Technology Ultra Low On-Resistance
|
International Rectifier
|
| 2SK2530 2SK2530TP-FA |
2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| CMLM0205 |
MULTI DISCRETE MODULESURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| STL60NH3LL07 |
N-channel 30 V - 0.0065 楼? - 30 A - PowerFLAT垄芒 (6x5) ultra low gate charge STripFET垄芒 Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT?/a> (6x5) ultra low gate charge STripFET?/a> Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
|
STMicroelectronics
|
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| IRLR8726PBF09 IRLR8726TRR IRLR8726TRPBF IRLR8726PB |
HEXFET Power MOSFET
86 A, 30 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra-Low Gate Impedance
|
International Rectifier
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
|
