| PART |
Description |
Maker |
| BS616LV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
| BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
| BS616LV8013 |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
|
BSI
|
| BS616LV2010 |
Asynchronous 2M(128Kx16) bits Static RAM
From old datasheet system
|
BSI
|
| BS616UV4016 |
From old datasheet system
Asynchronous 4M(256Kx16) bits Static RAM
|
Brilliance Semiconductor
BSI
|
| BS62LV2006TI BS62LV2006TIG55 BS62LV2006TIG70 BS62L |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
Asynchronous 2M(256Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
ETC
BSI[Brilliance Semiconductor]
|
| BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system
Asynchronous 4M(512Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
Brilliance Semiconducto...
|
| IDT72T51236L5BB IDT72T51236L5BBI IDT72T51256L6BBI |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| BS62UV2006 BS62UV2006TIP85 BS62UV2006DC BS62UV2006 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit 超低功率/电压CMOS SRAM56K × 8
1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SSOP
Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
