PART |
Description |
Maker |
CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
K7P401822M-H16 K7P401822M-H19 K7P401822M-H20 K7P40 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
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GSI Technology, Inc.
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CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT |
From old datasheet system 64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 3.3V 64K x 32 Static SRAM with Flow-Through Outputs
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IDT[Integrated Device Technology]
|
IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through From old datasheet system 8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
CY7C1481V33-133BZXI CY7C1481V33-133AXI CY7C1481V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|