PART |
Description |
Maker |
FDB10AN06A0 FDP10AN06A0 |
CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100 N-Channel PowerTrench MOSFET 60V/ 75A/ 10.5m N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз N-Channel PowerTrench MOSFET 60V, 75A, 10.5mOhm
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 57A条) 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
FQD20N06LE FQU20N06LE FQD20N06LETM |
60V N-Channel Logic level QFET (Built in ESD Protection Diode) 60V LOGIC N-Channel MOSFET 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
HUF76439P3 HUF76439S3S HUF76439S3ST |
71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 75 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Dual Differential Drivers and Receivers With /-15-kV IEC ESD Protection 16-TSSOP -40 to 85 75 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 71A, 60V, 0.014Ohm, N-Channel, Logic Lvl UltraFET Power MOSFET 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
|
Fairchild Semiconductor, Corp. Intersil, Corp.
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
|
Renesas Electronics, Corp. NXP Semiconductors N.V.
|
FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 30A条(丁)| TO - 220AB现有
|
Powerex, Inc.
|
IRHM7064 JANSF2N7431 JANSG2N7431 IRHM7064UPBF IRHM |
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET 60V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 60V00kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 254AA封装
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International Rectifier, Corp.
|
IRFP048 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
|
International Rectifier Power MOSFET
|
IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier Power MOSFET
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