| PART |
Description |
Maker |
| GLT41016 GLT41016-30J4 GLT41016-30TC GLT41016-35J4 |
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT 64K的16的CMOS动态RAM的扩展数据输
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
etc
|
| KM6161000B |
64K x16 Bit Low Power CMOS Static RAM(64K x16浣?????CMOS ???RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT7008L20J IDT7008L20JB IDT7008L20JI IDT7008S_L I |
64K x 8 Dual-Port RAM
From old datasheet system
IC,SRAM,64KX8,CMOS,LDCC,84PIN,PLASTIC
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, CPGA84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 55 ns, PQCC84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology Inc
Integrated Device Technology, Inc.
|
| P4C1298-45JMB P4C1298-45PMB P4C1298-45JC P4C1298-4 |
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 64K X 4 STANDARD SRAM, 15 ns, CDIP28
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 超高4K的4静态CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| KM64258C |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM4164B KM4164B-10 KM4164B-12 KM4164B-15 |
64K X 1 BIT DYNAMIC RAM WITH PAGE MODE 64K的1位动态内存页面模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| W26010A W26010AJ-15 W26010AJ-151 W26010AJ-20 W2601 |
64K 16 HIGH-SPEED CMOS STATIC RAM 64K6 HIGH-SPEED的CMOS静态RAM
64K 16 HIGH-SPEED CMOS STATIC RAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B- |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
