| PART |
Description |
Maker |
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4208 E007810 |
HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVER, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| HAT2215R HAT2215R-EL-E HAT2215RJ HAT2215RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK2885L 2SK2885S 2SK2885 |
Power switching MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ553 2SJ553L 2SJ553S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MP4501 |
N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| MP441007 MP4410 |
High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
| MP420807 |
High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
| 2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply)
High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
High-voltage Switching Transistor ( 400V, 0.5A)
|
ROHM[Rohm]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
