PART |
Description |
Maker |
HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs From old datasheet system 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管) 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation FAIRCHILD SEMICONDUCTOR CORP
|
SC070 |
Schottky Die 70 x 92 Mils
|
International Rectifier
|
1673ATIN250 1673ATIN50 1673ATIN100 |
RG-402/U type, 19 AWG solid .036 silver-plated copper-covered steel conductor
|
List of Unclassifed Man...
|
2SJ555 2SJ555-E |
60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
SC100..5.SERIES |
SCHOTTKY DIE 105 x 105 mils
|
International Rectifier
|
APT20M36BLL APT20M36SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 200V 65A 0.036 Ohm
|
Advanced Power Technology
|
PUMA2U8002I-25 PUMA2U8002I-20 PUMA2U8002M-15 PUMA2 |
DIE SALE, 1.8V,11MIL(SERIAL EE) x32 EPROM Module 10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE) 8-TSSOP, PB/HALO FREE,NiPdAu, 1.8V(SERIAL EE) 8 TSSOP, PB/HALO FREE, IND TEMP, 1.8V(SERIAL EE) X32号存储器模块 8-SAP,PB/HALO FREE,IND TEMP,2.7V(SERIAL EE) X32号存储器模块
|
NXP Semiconductors N.V. Amphenol, Corp.
|
AUIRF7640S2TR AUIRF7640S2TR1 |
DirectFET Power MOSFET 5.8 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET DirectFETPower MOSFET
|
International Rectifier
|
SB073P200-W-AG SB073P200-W-AG_AL SB073P200-W-AG/AL |
Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp
|
TRANSYS Electronics Lim... TRANSYS Electronics Limited
|
SB039C015-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
|
TRANSYS Electronics Limited
|
SB065C040-3-W-AG SB035C015 |
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF.
|
TRANSYS Electronics Limited
|
SB040P150-W-AG SB040P150-W-AL |
Schottky Barrier Diode Wafer 40 Mils, 150 Volt, 1 Amp
|
TRANSYS Electronics Limited
|