PART |
Description |
Maker |
H5N2522FP-E0-E-15 |
250V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
DTB3G DTB3 DTB3B DTB3E DTB3C |
3.0A Bidirectional Thyristor 3.0A的双向晶闸管 MOSFET N-CH 250V 12A TO-220FN MOSFET N-CH 200V 15A TO-220FN
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
RDN080N25 |
Switching (250V, 8A)
|
ROHM[Rohm]
|
PR103W PR103K PR134K PR101W PR114K PR105KW PR125K |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|800V V(RRM)|12A I(T) THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|1KV V(RRM)|12A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|400V V(RRM)|12A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|12A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|12A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|1.2KV V(RRM)|12A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|12A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|12A I(T) THYRISTOR MODULE|AC SWITCH|1.2KV V(RRM)|12A I(T) 可控硅模块|交流开关| 1.2KV五(无线资源管理)| 12A条疙(T
|
Stackpole Electronics, Inc.
|
RJK5012DPP-E0T2 RJK5012DPP-E0-15 |
500V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SB826 |
PNP Epitaxial Planar Silicon Transistors 50V/12A Switching Applications
|
SANYO
|
2SK2711 A5800295 |
Switching (250V, 16A) From old datasheet system
|
ROHM
|
MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system
|
Toshiba Corporation Toshiba Semiconductor
|
BAS19W-M0RVG |
SOT-323 100-250V/200mA Switching Diode
|
Taiwan Semiconductor Co...
|
FK20SM-5 |
Power MOSFETs: FK Series, 250V Class HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET(减振钢板基本\u003d 250V,的Rdson)\u003d 0.075ohm,身份证\u003d 38A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 67A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 20A条(丁)|的Z -委员
|
Ricoh Co., Ltd.
|