| PART |
Description |
Maker |
| TND303S 2359 |
ExPD (Excellent Power Device)
From old datasheet system
|
Sanyo
|
| TN8D41A |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)
|
Sanyo Semicon Device
|
| TND312S |
ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive
|
Sanyo Semicon Device
|
| TND323VD |
1 A HALF BRIDGE BASED PRPHL DRVR, PDSO8
ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive
|
Sanyo Semicon Device
|
| SCRH5D18-220 |
Magnetically shielded construction, Excellent Power Density
|
List of Unclassifed Man...
|
| FCX789A |
2W power dissipation, Excellent HFE characteristics up to 10 Amps.
|
TY Semiconductor Co., Ltd
|
| 110MDS |
Three - Phase Bridge Rectifier Excellent power volume ratio
|
Naina Semiconductor ltd.
|
| 90MDS |
Three - Phase Bridge Rectifier Excellent power volume ratio
|
Naina Semiconductor ltd.
|
| 0828 |
The 0828 filters are excellent for suppressing noise from switching power supplies
|
JMK Inc.
|
| IPP023NE7N3G IPI023NE7N3G |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| IPB08CN10NG10 IPI08CN10NG |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| IPI111N15N3G IPB108N15N3G IPP111N15N3G |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
